We have systematically studied the growth of highly strained InGaAs quantum wells (QWs) at low growth temperatures by molecular beam epitaxy (MBE). Photoluminescence (PL) measurements show that the emission wavelength increases gradually when increasing the In content from 24% up to 42% while the PL intensity dramatically drops when the In content is above 39 %. Luminescence at 1.245 μ m is achieved from a 7 nm thick In0.42Ga0.58As QW with a linewidth of only 17.7meV. Lasing at 1.182 and 1.215μ m occurs from an In0.36Ga0.64As QW and an In0.39Ga0.61 As QW laser, respectively. In the first case, a high characteristic temperature, T-0 of 213 K between 20 and 60 ° C and that of 136 K between 60 and 70 ° C are obtained. © 2005 Elsevier B.V. All rights reserved.