InGaAsP epilayers and TnGaAsP/GaInP single quantum well (SQW) structures have been grown by metalorganic chemical vapor deposition (MOCVD) on GaAs substrates using tertiarybutylphosphine (TBP) and tertiarybutylarsme (TBAs) as group V sources. Both InGaAsP epilayers and InGaAsP/GaInP SQW structure show strong photoluminescence emission, suggesting good optical quality. Finally, ridge waveguide InGaAsP/GaInP/A1GaInP QW lasers have been demonstrated with an emission wavelength around 0.8 mu m and a threshold current of 24 mA under continuous wave operation at room temperature, indicating TBP and TBAs are as good as PH3 and AsH3 for the growth of high-power 0.8 pm lasers. (c) 2005 Elsevier B.V. All rights reserved.