Structure and residual stress in gamma-LiAlO2, layer fabricated by vapor transport equilibration on (0001)sapphire

Li SZ; Yang WQ; Wang YZ; Liu JF; Zhou SM; Xu J; Han P; Zhang R

Journal of Crystal Growth, Vol.282, No.1-2, 186-189, 2005

DOI10.1016/j.jcrysgro.2005.04.109 Export Citation

Structure and residual stress in gamma-LiAlO2, layer fabricated by vapor transport equilibration on (0001)sapphire

Li SZ, Yang WQ, Wang YZ, Liu JF, Zhou SM, Xu J, Han P, Zhang R

gamma-LiAlO2 layers with a highly preferred (1 0 0) orientation were prepared by vapor transport equilibration (VTE) technique on (0 0 0 1) sapphire substrate. Microststructure of the gamma-LiAlO2 layers was studied by XRD and SEM. In the temperature range from 750 to 1100 degrees C, the residual stress in the gamma-LiAlO2 layers varied from tensile to compressive with the increase of VTE temperature, and the critical point of the change between tensile and compressive stress is around 975 degrees C. (c) 2005 Elsevier B.V. All rights reserved.

Keywords:residual stress;sapphire substrate;vapor transport equilibration;gamma-LiAlO layer