Na0.5Bi0.5TiO3 thin films have been grown on p-type Si(111) and Pt/Ti/SiO2/Si substrates by a method of chemical solution decomposition. The structure and microscopy were studied by X-ray diffraction and atomic force microscopy, respectively. The electrical measurements were conducted on metal-ferroelectric-semiconductor or metal-ferroelectric-metal capacitors. The films show low leakage current. They also exhibit good ferroelectric and dielectric properties. (c) 2005 Elsevier B.V. All rights reserved.