화학공학소재연구정보센터
Journal of Crystal Growth, Vol.284, No.3-4, 417-424, 2005
Epitaxial CeO2 buffer layer on deliberately miscut sapphire for microcrack-free thick YBa2Cu3O7-delta films
CeO2 buffer layers were grown on deliberately miscut Al2O3 (1 1 0 2) Surfaces by pulsed laser deposition. Atomic force ;microscopy observations revealed that their morphology was very smooth. High lattice perfection of the CeO2 layer was shown by X-ray diffraction. Thick YBa2CU3O7-delta (YBCO) films have been grown on such vicinal surfaces by laser ablation. The resultant YBCO films were stoichiometric and microcrack-free with a porous morphology (confirmed by scanning electron rnicroscopy), consisting of interconnected islands and deep holes (pores). The porous feature is considered as one of the sources contributing to the strain-relieving mechanism responsible for the increase in film thickness without microcracking. Microcrack-free thick YBCO films revealed T-c=90.5 +/- 0.5 K, J(c)(77.3 K, 0 T) = 1.5 -3.0 x 10(6) A/cm(2), and a substantial enhancement of J(c) x t(77.3 K, 0 T) up to 246 A/cm. (c) 2005 Elsevier B.V. All rights reserved.