Preparation of p-type ZnO thin films on Al2O3 (0 0 0 1) substrates is reported, which involves two different p-type dopant source materials such as Zn3As2 and Zn3P2 for As and P doping, respectively, during pulsed laser deposition, while an ion implantation method was used to dope N in the ZnO films. The hole concentrations of 2.5 x 10(17)-1.2 x 10(18)cm(-3) have been observed in As-doped p-type ZnO films after being underwent rapid thermal annealing (RTA) at 200 degrees C under an N-2 ambient. In the case of P doping, 3 mol% P-doped ZnO films at RTA between 600 and 800 degrees C under an O-2 ambient exhibited p-type behavior with the hole concentrations of 5.1 x 10(14)-1.5 x 10(17) cm(-3). In the case of N doping, after RTA up to 700 degrees C, films implanted with an N dose of 1 x 10(12) ions/cm(2) showed p-type conductivity with a hole concentration of similar to 6.01 x 10(17)cm(-3) and a low resistivity of similar to 5.2 x 10(-1) ohm cm. The low-temperature photoluminescence results showed the peak associated with the neutral-acceptor bound exciton (A degrees, X) emission only in the films showing p-type behavior. (c) 2005 Elsevier B.V. All rights reserved.