Using the micro-pulling-down method, Pr3+-doped Y2SiO5 and Lu2SiO5 single crystals have been grown and their optical and luminescence properties have been investigated. The position of the lowest 5d absorption level was found at about 246 nm and in both materials an intense and fast 5d-4f luminescence peaking round 275nm with a shoulder round 315nm has been observed at room temperature. Photoluminescence decay time at room temperature was obtained to be of about 17 and 6ns in the leading decay component in Pr3+-doped Y2SiO5 and Lu2SiO5, respectively. Shorter decay time of Pr3+-doped Lu2SiO5 was explained by the ionization of the lowest 5d, state of Pr3+. (c) 2005 Elsevier B.V. All rights reserved.