In0.45Ga0.55As:Sb/GaAs (1.3 mu m) vertical cavity surface emitting lasers (VCSELs) were grown by metalorganic chemical vapor deposition (MOCVD). A In0.45Ga0.55As:Sb/GaAs quantum well (QW) exhibited an emission wavelength of 1.26 mu m with narrow fullwidth at half-maximum (FWHM) of 35.9meV. For the fabricated VCSEL with 5 mu m diameter oxide-confined aperture, a room-temperature (RT).threshold current of 2.1 mA and an output power of 0.9 mW with 1.3 mu m emission were obtained. The 3 dB modulation frequency was measured to be 7.6 GHz. (c) 2005 Elsevier B.V. All rights reserved.