N-In codoped ZnO films were prepared on Si, SiO2 and glass substrates by ion-beam enhanced deposition method and their structural, optical and electrical properties were characterized. The polycrystalline N-In codoped ZnO films deposited on Si, SiO2 and glass substrates are found to have a preferred (002) orientation, smooth surface and high density. The as-deposited ZnO film on Si substrate showed p-type with a resistivity of 2.4 Omega cm. After being annealed in N-2 at a temperature lower than 600 C, the ZnO films showed p-type and the lowest resistivity was 0.8 Omega cm. When the annealing temperature was higher than 600 degrees C, the ZnO films becomes n-type, and as the annealing temperature goes up, the resistivity of the N-In decreases. (c) 2006 Elsevier B.V. All rights reserved.