Segregation phenomenon of Ga in Czochralski (CZ)-Si crystal growth has been investigated. The effective segregation coefficient, k(eff), of Ga was obtained for different growth rates by assuming the simple relationship between the concentration of Ga in Si crystal and the bulk Ga concentration in. melt. Applying BPS theory to effective segregation coefficients which is valid for the melt-solidified fraction up to 0.38, an equilibrium segregation coefficient of Ga was obtained, k(0) = 0.0079. (c) 2006 Elsevier B.V. All rights reserved.