Bulk growth of 6H-SiC in two non-basal directions is reported. The two explored surfaces are {1103}, named qC face, and {1103}, named qSi face. The as-grown surfaces exhibit smooth structure with a small ridging effect originating from the miscut of the seed crystals. Based on crystallographic considerations, it is proposed that a similar result would be achieved for the equivalent surfaces in 4H-SiC, {1102} and {1102}. (c) 2006 Elsevier B.V. All rights reserved.