PbZr0.53Ti0.47O3 (PZT) films with different thickness were deposited on LaNiO3-coated Si substrate by modified sol-gel process. The thickness effect on structure and properties of PZT films annealed at different temperature have been investigated. Single perovskite-phase PZT films with preferred [100] orientation and denser columnar structure were obtained, when annealed at a lower temperature of 600 degrees C, whereas a higher annealing temperature of 700 degrees C resulted in [110] preferred orientation and porous structure. The dielectric and ferroelectric properties of PZT films annealed at different temperature were evaluated systemically as a function of thickness, and the dielectric and ferroelectric properties of PZT films were found to greatly depend on both thickness and annealing temperature. (c) 2006 Elsevier B.V. All rights reserved.