Using a reduced-pressure chemical vapor deposition cluster tool, we have studied at a growth pressure of 20 Torr, the growth kinetics of Si and SiGe on Si(100), Si(110) and Si(111) substrates. The Si growth rates on Si(I 10) and Si(111) are consistently less than the ones on Si(100), this both in the high temperature, supply-limited regime and especially in the low-temperature, H-desorption-limited one. We have also studied at 700 degrees C the growth kinetics of SiGe using a dichlorosilane + germane chemistry. For a given set of precursor mass-flows, the Ge concentration decreases significantly when switching from a (100) to a (111) and finally to a (110) surface. The SiGe growth rate increases almost linearly with the GeH4 mass-flow on (100) surfaces. By contrast, it bows downwards from linearity on (110) and (111) surfaces, leading for high germane mass-flows to lower growth rates than on (100). (c) 2006 Elsevier B.V. All rights reserved.