We propose a 1.3 mu m high-density InAs quantum dot (QD) structure for optical devices that uses an As, source and a gradient composition strain reducing layer (GC-SRL). The temperature dependence of the photoluminescence (PL) peak intensity for a temperature increase from 11 K to room temperature was very low at 1/3. Moreover, the PL peak intensity was ten times greater than that of low-density QDs because of an increase in the QD number, although the PL bandwidth was the same. For the first time, we realized QDs with high-density, uniformity, and quality. This is a promising result since optical devices with QDs exceeding 1.3 mu m on a GaAs substrate are useful in fiber communications. (c) 2006 Elsevier B.V. All rights reserved.