Atomic layer epitaxy (ALE) of MnAs on GaAs(001) has been investigated using bismethylcyclopentadienylmanganese (CH3C5H4)(2)Mn and trisdimethylaminoarsine As[N(CH3)(2)] for manganese and arsenic precursors, respectively. The alpha-MnAs layer of "type B" orientation was successfully grown by an alternative source supply with a wide growth temperature range from 320 to 500 degrees C. The grown layer showed a smooth surface morphology, reflecting the self-limiting growth. The decreased growth rate was observed below 350 degrees C, which was caused by the decreased reaction rate of As[N(CH3)(2)](3) on the growing surface. A clear self-limiting mechanism was realized at higher growth temperatures but the saturation thickness was 9.5 x 10(-2) nm/cycle, which was attributed to the formation of a stable surface-reconstruction of manganese stabilized surface. (c) 2006 Elsevier B.V. All rights reserved.