GaAs1-xNx alloy films (0 <= x <= 0.055) grown on GaAs (001) substrates by metalorganic vapor phase epitaxy (MOVPE) using TBAs and DMHy as As and N precursors, respectively, have been investigated by Raman spectroscopy. It was found that, with incorporating N up to x = 0.055, a single N-related localized vibrational mode (LVM) is observed at around 468-475 cm(-1). We have investigated the N-related LVM Raman intensity (I-LVM) and frequency (omega(LVM)) as a function of N concentration. Both the I-LVM and the omega(LVM) were found to rise for the GaAs1-xNx films with higher N incorporation. It is also evident that the N concentration in the GaAs1-xNx grown films determined by Raman spectroscopy technique (x(Raman)) exhibits a linear dependence on the N concentrations determined by the high resolution X-ray diffraction (HRXRD) (x(XRD)). Our results demonstrate that the linear dependence of the x(Raman) on the x(XRD) provides a useful calibration method to determine the N concentration in dilute GaAs1-xNx films (x(XRD)<= 0.055). (c) 2006 Elsevier B.V. All rights reserved.