High-speed growth of AlGaN having high-crystalline quality and smooth surface by high-temperature MOVPE

Kato N; Sato S; Sumii T; Fujimoto N; Okada N; Imura M; Balakrishnan K; Iwaya M; Kamiyama S; Amano H; Akasaki I; Maruyama H; Noro T; Takagi T; Bandoh A

Journal of Crystal Growth, Vol.298, 215-218, 2007

DOI10.1016/j.jcrysgro.2006.10.044 Export Citation

High-speed growth of AlGaN having high-crystalline quality and smooth surface by high-temperature MOVPE

Kato N, Sato S, Sumii T, Fujimoto N, Okada N, Imura M, Balakrishnan K, Iwaya M, Kamiyama S, Amano H, Akasaki I, Maruyama H, Noro T, Takagi T, Bandoh A

The high-speed growth of AlGaN by high-temperature metalorganic vapor phase epitaxy was investigated. The alloy composition and growth rate can be predicted by thermodynamical analysis. Crack-free thick AlGaN with an atomically flat surface can be grown. (c) 2006 Elsevier B.V. All rights reserved.

Keywords:high-temperature growth;metalorganic vapor phase epitaxy;nitrides high-speed growth;AlGaN