The homoepitaxial growth of ZnTe on the (100)-oriented ZnTe substrate has been investigated at different reactor pressures using dimethylzinc and diethyltelluride as source materials. The growth rate of ZnTe layers increases with increasing reactor pressure and then it eventually becomes saturated. The longitudinal optical phonon mode of ZnTe and a strong free exciton emission are clearly observed for all samples, indicating the ZnTe layers are of good crystal quality. (c) 2006 Published by Elsevier B.V.