Vanadium-doped ZnSe, which is theoretically predicted to induce ferromagnetism above room temperature without carrier doping, was epitaxially grown on (10 0) GaAs substrate by metalorganic vapor-phase epitaxial method in an atmospheric pressure. The full-width at half-maximum (FWHM) of the peak diffracted from ZnSe (4 0 0) increased from 250 to 600 arcsec with increase in vanadium concentration. Comparing the vanadium concentration by EDX measurement with that by SIMS, the order of vanadium concentration measured by SIMS was almost equal to that by EDX. The local structural analysis of vanadium-doped ZnSe crystal was performed by X-ray-absorption fine structure (XAFS). Vanadium atoms in ZnSe crystal were substituted by the Se-site and/or exist in interstitial sites. (c) 2006 Elsevier B.V. All rights reserved.