Nitrogen-doped ZnO films have been grown by metalorganic vapor-phase epitaxy using diisopropylzinc, tertiary-butanol in the growth temperature range of 300-450 degrees C. Tertiary- butylamine was used as a nitrogen-dopant source. The nitrogen incorporation and N-H vibrational mode were observed by Raman spectroscopy. The electric properties of the as-grown samples showed n-type with carrier concentration of the order of 10(18) cm(-3). The N-H vibrational mode was eliminated and high electron concentration was decreased to the order of 10(15) cm(-3) by post-annealing at 500 degrees C. (c) 2006 Elsevier B.V. All rights reserved.