Epitaxial lateral overgrowth of gallium nitride with (11 (2) over bar2) facets was realized by metal organic chemical vapor deposition on GaN/sapphire (0 0 0 1) substrates with SiO2 stripe mask. After wet etching of the mask, periodic multiple quantum wells (MQWs) InGaN/GaN structures were grown on the whole surface. Cross-sectional transmission electron microscopy (TEM) showed that a higher growth rate on (0 0 0 1) plane compared to (I I (2) over bar 2) facet. The well thickness and In composition of the quantum wells (QWs) were analyzed by the cross-sectional and high resolution X-ray diffraction (HR-XRD) measurements. Micro photoluminescence spectra confirmed that the ELO InGaN/GaN MQWs structures on the (I 1 (2) over bar2) plane provide nearly multi-wavelengths output light. This is suitable for display devices based on the white color optical system. (c) 2006 Published by Elsevier B.V.