We present results for InP quantum dots (QDs) within a AlGaInP matrix grown by metalorganic vapor phase epitaxy (MOVPE) at an elevated temperatures of 690-730 degrees C. InP/AlGaInP QD lasers grown under these conditions operate at room temperature in a pulsed mode with a low threshold of 190 A/cm(2) (38 A/cm(2) per QD sheet) and lasing wavelength of 740 nm for a 2000 mu m long device with uncoated facets. (c) 2006 Elsevier B.V. All rights reserved.