Previous Article Next Article Table of Contents Journal of Crystal Growth, Vol.299, No.1, 234-234, 2007 DOI10.1016/j.jcrysgro.2006.10.196 Export Citation Optimization of KOH etching parameters for quantitative defect recognition in n- and p-type doped SiC (vol 289, pg 520, 2006) Sakwe SA, Muller R, Wellmann PJ Please enable JavaScript to view the comments powered by Disqus.
