화학공학소재연구정보센터
Journal of Crystal Growth, Vol.300, No.2, 483-485, 2007
Structural and electrical characterizations of single tetragonal FeSe on Si substrate
(001)-Oriented FeSe thin films were successfully fabricated by metal organic chemical vapor deposition on Si substrate with large thermal mismatch. X-ray diffraction and X-ray photoelectron spectroscopy measurements indicate that the films are of single tetragonal phase FeSe. Hysteresis loop indicates that the FeSe structure is ferromagnetic at room temperature with coercive force of 260Oe. The FeSe films show p-type conduction with carrier concentration of 10(21) cm(-3), and the anomalous Hall effect was discussed. (c) 2007 Elsevier B.V. All rights reserved.