An atmospheric pressure chemical vapor infiltration (CVI) process without metallic catalysts was applied for the growth of SiC nanowires within stacked SiC fiber fabrics. We investigated the effect of the concentration of a reactant gas (CH3SiCl3, NITS) on the growth behavior and microstructure of the SiC nanowires. At high concentration of MTS in a H-2 + MTS mixture gas, one-dimensional (1D) SiC deposits with diameters of several hundreds of nanometers were formed. Microstructures of the I D SiC deposits exhibited a strong positional dependency throughout the thickness direction of the stacked fabric due to a depletion of the MTS gas. On the other hand, single-crystalline SiC nanowires with average diameters of 50-60 nm could be obtained at a low concentration of MTS. The SiC nanowires also exhibited a homogeneous growth. both in the plane of each fabric layer and throughout the thickness of the sample. (c) 2007 Elsevier B.V. All rights reserved.