beta-FeSi2 film on Si(001) substrate was prepared by molecular beam epitaxy method using an Fe source. The crystallographic orientation of beta-FeSi2 film on Si(001) substrate was characterized by using X-ray diffraction. Using scanning electron microscopy, surface morphology and film thickness of samples were observed and estimated, respectively. The mobility of beta-FeS2 film on Si(001) substrate were also characterized by Hall measurement at room temperature. A part of the enhancement of figure of merit was evaluated as the functions of mobility and crystallographic orientation of samples. (c) 2007 Elsevier B.V. All rights reserved.