InN/In0.83Ga0.17N multiple quantum well (MQW) structures have been fabricated on 3C-SiC (0 0 1) substrates by radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE). The surface morphology, structural properties, and optical properties of the samples were investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD) and photoluminescence (PL), respectively. XRD satellite peaks due to the periodic structure were clearly observed in the MQW structures grown at temperatures lower than 530 degrees C. PL emissions from the MQW were observed around 0.85 eV. (c) 2006 Elsevier B.V. All rights reserved.