We have successfully grown ordered InGaAs quantum dots (QDs) with perfect selectivity; these QDs were formed in a nano-hole region and not in any other flat regions. To achieve perfect selectivity, InGaAs was grown at a high temperature of 530 degrees C and a low growth rate of 0.035 ML/s. A scanning tunneling microscope (STM) image showed the formation of the ordered InGaAs QDs with a density of 1 x 10(10) cm(-2), whereas only monolayer steps were observed and no QDs were formed in the flat region. Further, we stacked InAs QD arrays by using the InGaAs QDs on the first layer as a template. Another STM image revealed the formation of small InAs QDs with a high density. QDs with an octagonal lattice arrangement were also formed in a region that was limited in a small area. This arrangement of InAs QDs is probably due to strain field of the underlying InGaAs QDs. (c) 2006 Elsevier B.V. All rights reserved.