Fabrication of high quality CdSe quantum dots is described in this paper. The source material was CdSe compound and the amount of the source supply was fixed to 2.2 monolayers throughout the study. The orientation of GaAs substrates, the source supply rate and the growth interruption time were changed as growth parameters. Photoluminescence (PL) was measured at 14 K. The high PL intensity and the narrow line width were used as measures of high quality. Optimum growth conditions were established. (c) 2006 Elsevier B.V. All rights reserved.