In this work, the numerical modeling of convection in a vertical Bridgman system under the influence of a rotating heat field was studied. First results show that changing of the heating from an axi-symmetric to a non-symmetric non-stationary configuration results in an increase in the convective flow and thus led to an increase of the melt uniformity because the convective cell is occupying almost the entire melt domain. Experimental growth of polycrystalline silicon under such special conditions provided ingots with improved texture and uniformity of electronic properties. (c) 2006 Elsevier B.V. All rights reserved.