Numerical simulation was carried out on SiC-CVD in a horizontal bot-wall reactor. The growth and doping features of both Si- and C-terminated surfaces were analyzed by changing the inlet source gas conditions. The role of conditions at the growing surface on the growth feature was investigated. It was identified that the conditions at the growing surface are good parameters to explain the growth feature. (c) 2007 Elsevier B.V. All rights reserved.