p-type doping of silicon carbide (SiC) is performed through the addition of an Al precursor in the gas phase. In this work, the attention was focussed on the use of (TMA). The decomposition mechanism of TMA was studied via quantum chemistry investigations, performing calculations through Becke-3 parameters and Lee-Young-Parr functionals. Particular attention was given to the homogeneous decomposition of TMA and to the reactions of TMA and of Al-containing species with the hydrogen radical. Thermal decomposition of Al(CH3)(x), can be considered as the preferential reactive path at typical process temperatures. (c) 2007 Elsevier B.V. All rights reserved.