Thin films of SiC were deposited by pulsed laser deposition on silicon and fused silica substrates at room temperature and 1125 K. The films were analysed by infrared reflection absorption spectroscopy (IRRAS) and the resulting spectra were characterised with a model to determine the film thickness and the crystal quality which is higher for the film deposited at 1125 K. The data obtained from UV/vis transmission spectroscopy were used to determine the optical bandgap (E-optical = 1.3 eV).