The investigation of pulsed laser deposited (PLD) HgCdTe films structures by means of electron diffraction and transmission electron microscopy (TEM) techniques was carried out. The deposition was made on GaAs, KCl, CdTe and sapphire substrates with YAG:Nd3+ (1.06 mu m) and XeCl (0.308 mu m) lasers. The substrate temperature was in the range 30 degrees C-250 degrees C. Both amorphous and polycrystalline films with different crystallite sizes were manufactured on substrates of different quality. The crystallite size versus film production conditions was evaluated from TEM studies.