A new method for evaluating surface recombination velocity at silicon-silicon dioxide interfaces by photocurrent measurements is proposed and validated by comparison with C-V measurements of the interface state density. This method is an evolution of the existing measurement of surface recombination velocity by the Elymat technique, and consists in measurements of surface recombination velocity under an applied surface bias. The application of a surface bias allows the control of the interface potential and the identification of the suitable interface condition such that surface recombination velocity can be considered as a measurement of the interface state density.