We have grown thin Pb(ZrxTi1-x)O-3 (PZT) films on Pt/SiO2/Si substrates by pulsed laser ablation (PLA) and subsequent rapid thermal annealing (RTA). X-ray diffraction analysis showed that the crystallographic orientation of PZT films after RTA clearly depended on the microstructure of as-deposited films. The preferentially (100)-oriented perovskite PZT films were obtained from the as-deposited films that had contained small grains having pyroclore structure. The capacitors made from these films showed high remnant polarization and good fatigue properties.