화학공학소재연구정보센터
Applied Surface Science, Vol.166, No.1-4, 304-308, 2000
Raman and photoluminescence spectroscopy from as grown and 147 keV Ar+-ion implanted AlxGa1-xAs/GaAs quantum wells
The AL(x)Ga(1-x)As/GaAs quantum wells (QWS) were subjected to 147 keV Ar+-ion bombardment. The response of the QWS was studied by means of the secondary ion mass spectroscopy (SIMS), low temperature photoluminescence (LTPL) and the inelastic light scattering spectroscopy. The damage accumulation in the QWS lends to a shift of quasiparticle energy levels towards lower energies in QWS and to a decrease of LO1 and LO2 frequency modes of the AL(x)Ga(1-x)As slabs. No good recovery has been found after annealing.