In the present work, a special solid phase epitaxy method has been adapted for the preparation of CoSi2 film. This method includes an epitaxial growth of Co films on Si (1 0 0) substrate, and in situ annealing of the Co/Si films in vacuum. It has been found that at the substrate temperature of 360 degreesC, fee cobalt film grows epitaxially on the Si (100) surface. The crystallographic orientation relations between fee Co film and Si substrate determined from the electron diffraction result are: (0 0 1) Co//(0 0 1) Si, [1 0 0] Co//[1 1 0]Si. Upon annealing at temperatures range from 500 to 600 degreesC, Co film reacts with Si substrate and transforms into CoSi2. The CoSi2 films prepared by this way are characterized by XTEM, XPS and AFM.