Indium nitride thin films were prepared by the reactive magnetron sputtering method. The indium target was sputtered by pure nitrogen gas. The effects of sputtering pressure (P) on the structural, optical and electrical properties of the films were investigated. With increasing P, the deposition rate decreased, and the film structure changed from crystalline phase with a hexagonal wurtzite structure to amorphous one. The energy bandgaps in crystalline films are around 1.9 eV, whereas optical bandgaps in amorphous films are larger than this value. The electrical conductivity, Hall mobility and carrier concentration of the films depend on P and they take minima at P similar to 4 Pa