Amorphous SixCyGez:H (x +y + z = 1; z similar to 0.1) have been deposited by reactive sputtering of Si-Ge composite target in argon-methane gas mixtures. The effects of the addition of Ge and the methane partial pressure P on the film properties were investigated. At high P, the addition of Ce could improve the reduction of the photoconductivity with increasing P observed in a-SixCy:H (z = 0).