The improvement of electrophysical parameters of an SiO2/InAs interface were observed during a DC (direct current) sputter deposition of an ITO (indium tin oxide) him. We observed a reduced interface-state density for the ITO/SiO2/InAs structure from 2.5 x 10(12) to 5.7 x 10(11) cm(-2) eV(-1) with an electron-stimulated modification of a semiconductor-dielectric interface, The built-in positive charge density also decreased from 2.7 x 10(12) to 6.7 x 10(11) cm(-1). Experiments were conducted to verify that the main cause of the improvement was due to electron penetration through the SiO2 film into the bulk of the semiconductor crystal lattice. By using a DC sputter deposition for the ITO film, we have presented a new method for the modification of a semiconductor-dielectric interface of a ITO/SiO2/InAs structure.