Films of HgCdTe have been obtained by pulsed laser deposition (PLD) using: Nd:YAG pulse laser (40 ns. 1 J/pulse. lambda = 1.06 mum) and XeCl excimer laser (25 ns, 150 ml/pulse, lambda = 0.308 mum) Layers were deposited on monocrystalline and amorphous surfaces of Al2O3. Samples were obtained when the substrate temperature was 300 and 500 K. Monocrystalline Hg1-xCdxTe (x = 0.2) were used as a target. A thickness of layers obtained was in the range of 0.05-0.5 mum. depending on a type of laser used and on a number of shots. Surface morphology was investigated by electron scanning microscopy. The chemical composition of layers was determined by X-ray micro-analysts. The samples obtained were of good homogeneity and they reflected well the composition of the target. The structural properties of the samples were compared with results of the electrophysical measurements.