Applied Surface Science, Vol.180, No.1-2, 119-125, 2001
Nanoindentation studies of (111) GaAs/InP epilayers
The indentation load-displacement behaviour of GaAs/InP epilayers grown by MOVPE were studied using a Berkovich indenter to determine elastic modulus and hardness. These were measured to be in the range 85-120 and 3.73-8.72 GPa, respectively. They vary drastically with layer thickness exhibiting over-critical behaviour.