A brief review is given on EPR study of irradiation-induced defects in SiC. The results of low-temperature study of Ky1 and Ky2 centers reveal for both of them the C-S symmetry, spin S = 1/2 and close coincidence of the g-tensor components. For Ky2 defect the principal values of g-tensor have been determined as g(z) = 2.0048, g(x) = 2.0022 and g(y) = 2.0037, where z and x directions reside in the (11 (2) over bar0) plane and the z-axis makes up an angle 65 degrees with the c-axis. The same residence of z- and x-axis and an angle 59 degrees are found for Ky1 center, g(z) = 2.0058, g(x) = 2.0025 and g(y) = 2.0023. A comparison of experimental and calculated hyperfine (HF) parameters is presented which suggests that Ky2 and Ky1 defects can be assigned to the positively charged carbon vacancy in 6H-SiC. The EPR study of defects created along the Al+ ion track in n-type 6H-SiC shows that lineshape, linewidth and integral intensity of the EPR signal reflect the state of damaged layer generated by ion implantation. A variation of defect density with annealing is reported and defect origin is discussed.