SiOx remains the main starting material for obtaining nanocrystalline Si embedded in a SiO2 matrix. A SiOx layer grown by co-evaporating Si and SiO2 has been successfully annealed using a KrF pulsed excimer laser operating at 248 rim. Abrasion of the film surface was observed above 85 mJ/cm(2) and phase separation between Si-rich and SiO2-rich phases was initiated above this fluence as observed by XPS. (C) 2002 Elsevier Science B.V. All rights reserved.