The preparation of TiO2, In2O3, SnO2 doped In2O3 (ITO) and PbZr0.5Ti0.5O3 (PZT) films have been investigated by the metallorganic (MO) laser photolysis. TiO2 anatase phase was successfully obtained from Ti-2-ethylhexanolate by a two-step irradiation method, while rutile was formed from TiOacac under the same irradiation conditions. In2O3 and ITO films were crystallized by ArF irradiation above the laser fluence of 10 mJ/cm(2). The resistivity of the In2O3 film irradiated by further ArF laser in a vacuum and air atmosphere was 2.2 x 10(-2) and 2.2 x 10(-1) Omega cm, respectively. The lowest resistivity of the ITO film irradiated by the ArF laser in a vacuum was 6.0 x 10(-4) Omega cm. Epitaxial PZT film on a SrTiO3 substrate was successfully obtained by MO laser photolysis. (C) 2002 Elsevier Science B.V. All rights reserved.