A new method, high-vacuum electron-beam co-evaporation is used to prepare silicon nanocrystals (Si NCs) embedded in Al2O3 dielectric matrix in the form of thin films. Silicon and Al2O3 are co-evaporated by two electron guns at the same time at room temperature with the pressure below 1 x 10(-5) Pa. After evaporation, annealing in N-2 ambient at 500 and 800 degreesC for 1 h is performed. X-ray diffraction and atomic force microscopy are used to estimate the diameter of the Si NCs and check the morphology of the co-evaporation film respectively. X-ray photoelectron spectroscopy is used to investigate the chemical state of Si and Al in the as-prepared and annealed samples. Electrical properties of the Si NCs are investigated and resonant tunneling due to three dimensional quantum confinements is observed at room temperature. (C) 2002 Elsevier Science B.V. All rights reserved.