Thin films of Er:YAG and Er:YAP were deposited by subpicosecond (450 fs) and nanosecond (20 ns) KrF laser (lambda = 248 nm) on YAG, YAP, fused silica, silicon and sapphire substrates. Laser spot size, energy density, substrate temperature and deposition ambient (vacuum and oxygen) were varied. Comparison of growth rate, morphology, composition, crystallinity and adhesion of the films grown by subpicosecond and nanosecond deposition is presented. (C) 2002 Elsevier Science B.V. All rights reserved.