A round-robin study of arsenic depth Profiling was conducted by Japanese SIMS users using arsenic-implanted silicon specimens with doses of 3 x 10(14) to 3 x 10(16) ions/cm(2). The peak concentration of the implanted arsenic was about 11 at.% for the specimen with the dose of 3 x 10(16) ions/cm(2). The shape of arsenic ion (AsSi- and As-) profiles was not affected by the incident angle of Cs+ primary ion. The RSFs calculated from AsSi-/Si-2(-) and As-/Si- by point-by-point normalization were constant against arsenic doses. No dependence of RSFs on the angle of primary ion incidence was observed. Using an AsSi-/Si-2(-) or As-/Si- point-by-point calibration method, arsenic with high concentration (11 at.%) in silicon can be quantitatively evaluated without being interfered by its matrix effect. (C) 2002 Elsevier Science B.V. All rights reserved.