Al (150 nm)/Ti (30 nm) contacts have been successively deposited onto p-type 6H-SiC wafers. The layer structure has been annealed at 900 degreesC for 4 min. The annealed contacts are Ohmic. The structure of the annealed contact layers was identified as a Ti3SiC2 layer on SiC and covered by an Al3Ti layer. Both layers and phases are formed as a result of solid phase interaction between the metallic layers and SiC, and are epitaxial to the 6H-SiC. Ti3SiC2 is suggested as a new contact material to p-type SiC, which promises high temperature stable contacts due to its excellent properties. (C) 2002 Elsevier Science B.V. All rights reserved.